Super Performances of Silicon Carbide Tube
Posted by Cathie Montanez on September 19, 2019 5:40 AM EDT
Silicon carbide tube is a kind of excellent silicon carbide finished product which is made of silicon carbide as the primary raw material and is fired at high temperature.
Characteristics of silicon carbide tubes
Silicon carbide tube has excellent properties, including high-temperature resistance, corrosion resistance, fast heat conduction, high strength, high hardness, good wear resistance, good thermal and shock resistance, high thermal conductivity and good oxidation resistance. Its two ends are equipped with a special high temperature resistant insulating sleeve, which can effectively avoid the corrosion of the metal solution on the electric heating element (including silicon carbon rod, electric furnace wire, etc.), and all the indexes are superior to various graphite products. It is mainly used in the non-ferrous metal exercise, medium frequency casting, various heat treatment electric furnaces, metallurgy, chemical and other industries.
Industrialization of silicon carbide devices
Silicon carbide JFETs are characterized by high input impedance, low noise, and good linearity. They are one of the fastest-growing silicon carbide devices and are the first to be commercialized. Compared with MOSFET devices, JFET devices do not have reliability problems due to gate oxide defects and low carrier mobility limitations, while unipolar operation characteristics allow them to maintain good high-frequency operation. In addition, JFET devices offer better high temperature operation stability and reliability. The junction structure of the gate of a silicon carbide JFET device is such that the threshold voltage of the JFET is usually negative, that is, a normally-on device, which is extremely disadvantageous for power electronics applications and cannot be compatible with current general-purpose driving circuits.
Semisouth and The Rutgers University of the United States have developed enhanced devices for normally-off operation by introducing a trench implant or mesa trench structure (TIVJFET) device processes. However, enhanced devices are often formed at the expense of certain forward-on-resistance characteristics, so a normally-on (depletion) JFET is easier to achieve higher power density and current capability, while a depleted JFET device can pass the cascading method implements a normally-off working state. The cascading method is implemented by connecting a low voltage Si-based MOSFET in series. The driver circuit of the cascaded JFET device is naturally compatible with the general silicon-based device driver circuit. The cascading structure is very suitable for replacing the original silicon IGBT device in high voltage and high power applications and directly avoids the compatibility problem of the driving circuit.
Stanford Advanced Materials supplies high-quality silicon carbide products to meet our customers' R&D and production needs. Please visit https://www.samaterials.com/ for more information.